Time | Content | Speaker |
Oct.21st, 2013 | ||
9:00-9:30 | opening ceremony | Representative of CPSS Representative of SMU |
9:30-11:30 | Lecture 1: The new technology and development trend of power electronic device | Prof. Xu Dehong, Zhejiang University |
13:30-16:30 | Lecture 2：physical Understanding and basis of power semiconductor devices 2.1 Key device concepts and electrical characteristics 2.2 Challenges in SMART Power Integration 2.3 Basic semiconductor structures of major devices and their comparison based on carrier concentration profiles 2.4 Semiconductor material and conductivity 2.5 PN- structure, SCR, blocking capability | Doctor Leo Lorenz, Academician of DA |
Oct.22nd, 2013 | ||
8:30-11:30 | Lecture Three：Fast switching diode device 3.1 Reverse Blocking Capability 3.2 Build up and remove Electron-Hole-Plasma during turn-on and turn-off intervals 3.3 Dynamic performance of FRED-Diode 3.4 Limits of FRED-Diode and development trend | Doctor Leo Lorenz, Academician of DA |
13:30-16:30 | Lecture Four：application of power electronic device in naval architecture and ocean engineering 4.1 power converters for marine energy system 4.2 power converters for ship electric propulsions | Doctor Charpentier, The French navy academy |
Oct.23rd, 2013 | ||
8:30-11:30 | Lecture Five：The principle and application of GaN devices 5.1 GaN Physics and development history 5.2 Device design & package scheme 5.3 600-V GaN device performance 5.4 GaN boost circuits 5.5 GaN resonant circuits 5.6 GaN bridge circuits | Dr. Yifeng Wu, Transphorm |
13:30-16:30 | Lecture Six：power electronic technology in wind power 6.1 Wind power converter unit 6.2 Offshore wind multiterminal flexible DC 6.3Wind dynamic reactive power support | Prof. Caixu, Shanghai Jiaotong University |
Oct. 24th, 2013 | ||
8:30-11:30 | Lecture 7：The concept of unipolar device and Power MOSFET 7.1 Basics of MOS-controlled device 7.2 Power MOSFET cell structure, static and switching behaviour 7.3 Device parasitics and impact on dynamic performance 7.4 Super junction device, characteristics and difference to conventional technologies 7.5 New development in low voltage power MOSFET and challenges in application 7.6 Device limits, avalanche behaviour and future design criteria 7.7 Driving and protection | Doctor Leo Lorenz, academician of DA |
13:30-16:30 | Lecture 8：High-power power electronic device and its application 8.1IGBT chip technology and improve performance for applications 8.2 The application trend of IGBT in transmission and distribution | Doctor Chen Ziying, infineon |
Oct.25th, 2013 | ||
8:30-11:30 | Lecture 9：Unipolar power devices based on silicon carbide 9.1 SiCschotty diode and electrical performance 9.2 Device limits and benefits in application 9.3 SiC-JEFT and electrical behaviour 9.4 Future development trends 9.5 Ultra fast switching-challenges in Power Converter Systems | Doctor Leo Lorenz, academician of DA |
13:30-16:30 | Lecture 10：The protection of the power electronic devices and heat dissipation 10.1 Semiconductor fuse technology 10.2 The application of busbar in converter 10.3 Power electronic device cooling plate | Mersen |
Oct. 26th, 2013 | ||
8:30-11:30 | Lecture 11 bipolar devices controlled by MOS 11.1Basics of carrier modulated devices 11.2Static and dynamic performance (electron-hole-plasma modulation) 11.3Overload characteristics, short circuit capability and destruction modes 11.4Avalanche characteristics (dynamic evaluation behaviour) 11.5di/dt, dv/dt-limits and physical effect 11.6Driving and protection circuit for low- and high-power devices 11.7 Impact of fast switching to circuit and device parasitics 11.8Thermal management, and loss calculation | Doctor Leo Lorenz, academician of DA |